
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
CATEGORY
Dry / Plasma Etch
Last Verified: 26 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
101544
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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P5000 ETCH
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Last Verified26 days ago
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P5000 ETCH
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Last Verified26 days ago
APPLIED MATERIALS (AMAT)
P5000 ETCH
Dry / Plasma EtchVintage: 0Condition: Used
Last Verified26 days ago
APPLIED MATERIALS (AMAT)
P5000 ETCH
Dry / Plasma EtchVintage: 0Condition: Used
Last Verified26 days ago
APPLIED MATERIALS (AMAT)
P5000 ETCH
CATEGORY
Dry / Plasma Etch
Last Verified: 26 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Unknown
Product ID:
101544
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.Documents
Similar Listings
View AllAPPLIED MATERIALS (AMAT)
P5000 ETCH
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P5000 ETCH
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P5000 ETCH
Dry / Plasma EtchVintage: 0Condition: UsedLast Verified:26 days agoAPPLIED MATERIALS (AMAT)
P5000 ETCH
Dry / Plasma EtchVintage: 0Condition: UsedLast Verified:26 days agoAPPLIED MATERIALS (AMAT)
P5000 ETCH
Dry / Plasma EtchVintage: 0Condition: UsedLast Verified:26 days agoAPPLIED MATERIALS (AMAT)
P5000 ETCH
Dry / Plasma EtchVintage: 0Condition: UsedLast Verified:26 days agoAPPLIED MATERIALS (AMAT)
P5000 ETCH
Dry / Plasma EtchVintage: 1996Condition: UsedLast Verified:Over 30 days agoPREFERRED